CONFORMAL DOPING FOR FINFET DEVICES

摘要

A conformal doping process for FinFET devices on a semiconductor substrate which includes NFET fins and PFET fins. In a first exemplary embodiment, an N-type dopant composition is conformally deposited over the NFET fins and the PFET fins. The semiconductor substrate is annealed to drive in an N-type dopant from the N-type dopant composition into the NFET fins. A P-type dopant composition is conformally deposited over the NFET fins and the PFET fins. The semiconductor substrate is annealed to drive in a P-type dopant from the P-type dopant composition into the PFET fins. In a second exemplary embodiment, one of the NFETfins and PFET fins may be covered with a first dopant composition and then a second dopant composition may cover both the NFET fins and the PFET fins followed by an anneal to drive in both dopants.

主权项

1. A conformal doping process for FinFET devices comprising:
forming a first plurality of fins on a semiconductor substrate; forming a first plurality of gates with each gate of the first plurality of gates wrapping around a central portion of at least one of the fins of the first plurality of fins so as to leave end portions of the first plurality of fins exposed, the first plurality of fins and first plurality of gates being for N-type FinFET devices (NFETs); forming a second plurality of fins on the semiconductor substrate; forming a second plurality of gates with each gate of the second plurality of gates wrapping around a central portion of at least one of the fins of the second plurality of fins so as to leave end portions of the second plurality of fins exposed, the second plurality of fins and second plurality of gates being for P-type FinFET devices (PFETs); selectively forming a conformal oxide layer over the PFET second plurality of fins so as to conformally cover all of each of the PFET second plurality of fins; conformally depositing an N-type dopant composition over the NFET first plurality of fins and the PFET second plurality of fins such that the N-type dopant composition is in direct contact with the NFET first plurality of fins and directly in contact with the oxide layer over the PFET second plurality of fins; annealing the semiconductor substrate to drive in an N-type dopant from the N-type dopant composition into the NFET first plurality fins; stripping the N-type dopant composition from the NFET first plurality of fins and the PFET second plurality of fins; stripping the oxide layer from the PFET second plurality of fins; selectively forming a conformal oxide layer over the NFET first plurality of fins so as to conformally cover all of each of the NFET first plurality of fins; conformally depositing a P-type dopant composition over the NFET first plurality of fins and the PFET second plurality of fins such that the P-type dopant composition is in direct contact with the PFET second plurality of fins and directly in contact with the oxide layer over the NFET first plurality of fins; annealing the semiconductor substrate to drive in a P-type dopant from the P-type dopant composition into the PFET second plurality fins; stripping the P-type dopant composition from the NFET first plurality fins and the PFET second plurality of fins; and stripping the oxide layer from the NFET first plurality of fins.