发明名称 Integrated circuit device
摘要 An integrated circuit device includes a semiconductor substrate, an active element and a passive element. The active element is made of the semiconductor substrate. The passive element includes a functional element filled in a groove or hole provided in the semiconductor substrate along a thickness direction thereof and is electrically connected to the active element. The functional element has a Si-O bond region obtained by reacting Si particles with an organic Si compound.
申请公布号 EP2835829(A3) 申请公布日期 2015.03.18
申请号 EP20140179869 申请日期 2014.08.05
申请人 NAPRA CO., LTD. 发明人 SEKINE, SHIGENOBU;SEKINE, YURINA
分类号 H01L27/06;H01L21/02 主分类号 H01L27/06
代理机构 代理人
主权项
地址