Semiconductor device having a plurality of antifuse memory cells

摘要

An object is to provide an antifuse with little power consumption at the time of writing. The antifuse is used for a memory element in a read-only memory device. The antifuse includes a first conductive layer, a multilayer film of two or more layers in which an amorphous silicon film and an insulating film are alternately stacked over the first conductive layer, and a second conductive layer over the multilayer film. Voltage is applied between the first and second conductive layers and resistance of the multilayer film is decreased, whereby data is written to the memory element. When an insulating film having higher resistance than amorphous silicon is formed between the first and second conductive layers, current flowing through the antifuse at the time of writing is reduced.

主权项

1. A semiconductor device comprising:
a plurality of memory cells over a substrate, each comprising an antifuse, wherein the antifuse comprises a first conductive layer, a second conductive layer, and an intermediate layer interposed between the first conductive layer and the second conductive layer, wherein the intermediate layer is a multilayer film in which a semiconductor film and an insulating film are stacked, wherein the semiconductor film is over and in direct contact with the first conductive layer, the insulating film is over and in direct contact with the semiconductor film, and the second conductive layer is over and in direct contact with the insulating film, wherein a thickness of the semiconductor film is greater than or equal to 5 nm and less than or equal to 200 nm, and wherein a thickness of the insulating film is greater than or equal to 1 nm and less than or equal to 20 nm.