Semiconductor device and method for manufacturing same

摘要

There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes a substrate having a main surface, and a silicon carbide layer. The silicon carbide layer is formed on the main surface of the substrate. The silicon carbide layer includes a side surface as an end surface inclined relative to the main surface. The side surface substantially includes one of a {03-3-8} plane and a {01-1-4} plane in a case where the silicon carbide layer is of hexagonal crystal type, and substantially includes a {100} plane in a case where the silicon carbide layer is of cubic crystal type.

主权项

1. A semiconductor device, comprising:
a substrate having a main surface; and a silicon carbide layer formed on said main surface of said substrate, said silicon carbide layer including a voltage holding layer and a trench having a bottom portion in said voltage holding layer, said trench further having an end surface inclined relative to said main surface, an electric field relaxing region being formed at said bottom portion of said trench in said voltage holding layer, said electric field relaxing region having a different conductivity type from that of said voltage holding layer, a gate electrode being formed inside said trench, a single-layered gate insulating film is formed between said gate electrode and said end surface of said trench, and said end surface substantially including one of a {03-3-8} plane and a {01-1-4} plane in a case where said silicon carbide layer is of hexagonal crystal type, and substantially including a {100} plane in a case where said silicon carbide layer is of cubic crystal type.