| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device which has a layout having high reliability even with microfabrication; and provide a manufacturing method of the nonvolatile semiconductor storage device.SOLUTION: A nonvolatile semiconductor storage device of an embodiment comprises: a storage cell region which includes a plurality of semiconductor regions in which a semiconductor layer is separated in a first direction and extends in a second direction; and first gate insulation films, charge storage layers, second gate insulation films and control gate electrodes, which are provided on the plurality of semiconductor regions, respectively. The nonvolatile semiconductor storage device further comprises: a peripheral region which includes a resistive element layer provided on the semiconductor layer via a first insulation film; a dummy layer provided on a part of the resistive element layer via a second insulation film; a third insulation film provided at a first distance from the dummy layer and on the resistive element layer in a region where the dummy layer is not provided; a fourth insulation film provided at a second distance from the resistive element layer on the semiconductor layer; and a contact which extends from the resistive element layer in a direction toward the dummy layer and pierces the third insulation film and is connected to the resistive element layer. The first distance is shorter than the second distance. |
