| 摘要 |
一种发光二极体，包括矽基板，具有第一表面与相对的第二表面；缓冲层，设于矽基板之第一表面上，缓冲层包括相互交替堆叠之多个SiC层及多个InxAlyGa(1-x-y)N层，其中0x1，0y1且0(x+y)1，其中一SiC层与矽基板直接接触；第一半导体层，设于缓冲层上，第一半导体层具有第一导电型态；主动层，设于第一半导体层上；以及第二半导体层，设于主动层上，第二半导体层具有第二导电型态，且第二导电型态与第一导电型态不同。; a buffer layer disposed over the first surface of the substrate, wherein the buffer layer includes alternating layers of SiC layers and InxAlyGa(1-x-y)N layers, wherein 0x1, 0y1, and 0(x+y)1 and one of the SiC layers directly contacts the substrate and. The light emitting diode further includes a first semiconductor layer disposed over the buffer layer and having a first conductive type; an active layer disposed over the first semiconductor layer; and a second semiconductor layer disposed over the active layer and having a second conductive type different from the first conductive type. |
