METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for adjusting threshold of a semiconductor device is provided. In a plurality of semiconductor devices each including a semiconductor, a source or drain electrode electrically in contact with the semiconductor, a gate electrode, and a charge trap layer between a gate electrode and the semiconductor, a state where the potential of the gate electrode is set higher than the potential of the source or drain electrode while the semiconductor devices are heated at 150° C. or higher and 300° C. or lower is kept for one second or longer to trap electrons in the charge trap layer, so that the threshold is increased and Icut is reduced. Here, the potential difference between the gate electrode and the source or drain electrode is set so that it is different between the semiconductor devices, and the thresholds of the semiconductor devices are adjusted to be appropriate to each purpose.

主权项

1. A method for manufacturing a semiconductor device comprising a first semiconductor device and a second semiconductor device,
wherein each of the first semiconductor device and the second semiconductor device comprises:
a first semiconductor;an electrode in contact with the first semiconductor,a first gate electrode; anda charge trap layer between the first gate electrode and the first semiconductor, and wherein the method comprises the step of: keeping a state where a first potential difference between the first gate electrode and the electrode of the first semiconductor device is different from a second potential difference between the first gate electrode and the electrode of the second semiconductor device at higher than or equal to 150° C. and lower than or equal to 300° C., wherein a threshold of the first semiconductor device and a threshold of the second semiconductor device are different from each other.