SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

According to one embodiment, a semiconductor device includes first and second electrodes, and first, second, and third semiconductor regions. The first semiconductor region has a first conductivity type. The first electrode is provided above the first semiconductor region. The second semiconductor region has a second conductivity type and is provided between the first semiconductor region and the first electrode. The third semiconductor region is provided between the first semiconductor region and the first electrode, and has the second conductivity type. The third semiconductor region has an impurity concentration substantially equal to an impurity concentration of the second semiconductor region, and has first and second portions. The first and second portions constitute a concave-convex form on a side of the first semiconductor region of the third semiconductor region. The second electrode is provided above an opposite side of the first semiconductor region from the first electrode.

主权项

1. A semiconductor device comprising:
a first semiconductor region of a first conductivity type; a first electrode provided above the first semiconductor region; a second semiconductor region of a second conductivity type provided between the first semiconductor region and the first electrode; a third semiconductor region provided between the first semiconductor region and the first electrode, having an impurity concentration substantially equal to an impurity concentration of the second semiconductor region, and having a first portion and a second portion with a depth shallower than the first portion, the first portion and the second portion constituting a concave-convex form on a side of the first semiconductor region of the third semiconductor region; and a second electrode provided above an opposite side of the first semiconductor region from the first electrode.