| 摘要 |
Provided is a power semiconductor module in which, even if a heat sink substrate to be joined to the lower side of an insulative wiring board is made thinner than a conventional one, the concentration of stress occurring in a solder layer for joining the insulative wiring board to the heat sink substrate is reduced and a crack hardly occurs in the solder layer. The semiconductor module comprises: an insulative wiring board (1); a semiconductor element (4) mounted on one principal surface of the insulative wiring board (1); a heat sink substrate (10a) joined to the other principal surface of the insulative wiring board (1); a plurality of fins (10b) each having one end fixed to the other principal surface of the heat sink substrate (10a) and the other end being a free end; and a water jacket (11) for housing the fins (10b) and flowing a coolant between the fins (10b). In the power semiconductor module, part of the other ends of the fins are joined to the water jacket (11) and used as reinforcing fins. |
