| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device which improves an on-current while suppressing reduction in a threshold voltage in a transistor.SOLUTION: A semiconductor device comprises: an isolation region EI1 formed in a semiconductor substrate SB1 to surround an element formation region EF1; a gate electrode GE1 provided continuously on each of a part of the element formation region EF1 and a part of the isolation region EI1; a sidewall SW1 provided on a side face of the gate electrode GE1; an impurity region IR1 covered with the sidewall SW1; and an impurity region IR2 located at an opposite side to the gate electrode GE1 seen from the impurity region IR1, and having an impurity concentration higher than that of the impurity region IR1. The element formation region EF1 has an extension ER1 protruded in a gate width direction. The extension ER1 has a first part PT1 covered with the gate electrode GE1 and a second part PT2 covered with the sidewall SW1. A part of the impurity region IR1 is provided in the second part PT2 of the extension ER1.</p> |
