发明名称 NOISE ISOLATION BETWEEN CIRCUIT BLOCKS IN AN INTEGRATED CIRCUIT CHIP
摘要 <p>An integrated circuit includes a p-well block region having a high resistivity due to low doping concentration formed in a region of a substrate for providing noise isolation between a first circuit block and a second circuit block. The integrated circuit further includes a guard region formed surrounding the p-well block region for providing noise isolation between the first circuit block and the second circuit block.</p>
申请公布号 EP1989738(B1) 申请公布日期 2015.03.11
申请号 EP20070756373 申请日期 2007.01.18
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 SECAREANU, RADU M.;BANERJEE, SUMAN K.;HARTIN, OLIN L.
分类号 H01L21/8234;H01L21/761;H01L21/762;H01L21/765;H01L29/06;H01L29/76 主分类号 H01L21/8234
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