发明名称 |
NOISE ISOLATION BETWEEN CIRCUIT BLOCKS IN AN INTEGRATED CIRCUIT CHIP |
摘要 |
<p>An integrated circuit includes a p-well block region having a high resistivity due to low doping concentration formed in a region of a substrate for providing noise isolation between a first circuit block and a second circuit block. The integrated circuit further includes a guard region formed surrounding the p-well block region for providing noise isolation between the first circuit block and the second circuit block.</p> |
申请公布号 |
EP1989738(B1) |
申请公布日期 |
2015.03.11 |
申请号 |
EP20070756373 |
申请日期 |
2007.01.18 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
SECAREANU, RADU M.;BANERJEE, SUMAN K.;HARTIN, OLIN L. |
分类号 |
H01L21/8234;H01L21/761;H01L21/762;H01L21/765;H01L29/06;H01L29/76 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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