| 摘要 |
<p>Provided are a system, a method, and an apparatus which dynamically change and control the peripheral conductance of process gases to induce a fast change in the pressure of a plasma processing volume. The system and the method for processing plasma include a processing chamber, and a processing volume included in the plasma processing chamber. The plasma processing volume is smaller than that of the processing chamber. The plasma volume is configured as a plasma confinement structure including a top electrode, a substrate support surface facing the surface of the top electrode, and at least one outlet port. A conductance control structure is movably disposed near the outlet port, can control an outlet flow through the outlet port between a first flow rate and a second flow rate, wherein the conductance control structure controls the outlet flow rate, and at least one RF source is modulated, and at least one process gas flow rate is modulated according to a selected processing state set by the controller during a plasma process.</p> |
