| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an element having reverse blocking capability, and having low on-resistance and a high-speed switching characteristic. <P>SOLUTION: This gallium nitride semiconductor device includes: a silicon substrate 101; buffer layers 102, 103 formed on the silicon substrate 101; a gallium nitride semiconductor layer 104 formed on the buffer layers 102, 103; trench grooves 112 each formed at a depth reaching the gallium nitride semiconductor layer 104 penetrating the silicon substrate 101 and the buffer layers 102, 103 from the back face of the silicon substrate 101; and a metal film 113 formed in the trench grooves 112, and has reverse withstand voltage, wherein the metal film 113 and the gallium nitride semiconductor layer 104 form a schottky junction. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
