Semiconductor device having passing gate and method for fabricating the same

摘要

A semiconductor device includes passing gates. In the semiconductor device, a passing gate formed in a device isolation film is vertically positioned at a deeper and lower level than an operation gate formed in an active region defined by the device isolation film such that the passing gate does not overlap with a junction region. A step difference is formed in a storage node junction region, and thus a contact area between a storage node contact and the storage node junction region is increased, resulting in the improvement of operational characteristics of the semiconductor device.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
forming a device isolation film defining an active region in a substrate; forming an insulation film pattern defining a gate region over the active region and the device isolation film; forming trenches by etching the active region and the device isolation film using the insulation film pattern as an etch mask; forming a gate conductive film to fill the trenches as well as to be over the insulation film pattern; removing the gate conductive film formed over a passing gate region until the insulation film pattern is exposed, wherein the gate conductive film formed over an operation gate region is remained over the insulation film pattern; and etching the gate conductive film in a manner that an operation gate is positioned higher than a position of a passing gate.