| 摘要 |
<p>PURPOSE: A group 3 nitride based semiconductor light emitting diode device of a vertical structure and a manufacturing method thereof are provided to prevent vertical current injection by including a p type electrode structure with a current blocking structure. CONSTITUTION: An n type nitride based clad layer(301), a nitride based active layer(401), a p type nitride based clad layer(501) and a surface modification layer(601) are successively laminated in a lower side of an n type electrode structure(303). A p-type electrode structure(701) is comprised of a trench current blocking structure(11) and an electrode thin film layer(12) on the multilayer structure for a light emitting diode device. A wafer bonding layer is formed in the lower side of the p type electrode structure. A heat sink support is formed in the lower side of the wafer bonding layer. A p type ohmic contact electrode pad is formed in the lower side of the heat sink support. The surface modification layer has a surface with a super lattice structure and nitrogen polarity.</p> |
