SEMICONDUCTOR DEVICE HAVING SILICIDE ON GATE SIDEWALLS IN ISOLATION REGIONS

摘要

Provided are a semiconductor device and a method of fabricating the same. According to the semiconductor device, a silicide layer is formed on at least a part of both sidewalls of a gate pattern on a device isolation layer, thereby reducing resistance of the gate pattern. This makes an operation speed of the device rapid. According to the method of the semiconductor device, a sidewall spacer pattern is formed on at least a part of both sidewalls of the gate pattern in following salicide process by entirely or partially removing remaining portions of the sidewall spacer except for portions which are used as an ion implantation mask to form source/drain regions. This can reduce resistance of the gate pattern, thereby fabricating a semiconductor device with a rapid operation speed.

主权项

1. A semiconductor device comprising:
a device isolation layer located on a semiconductor substrate to define an active region; a gate line crossing the device isolation and active region; a gate silicide layer on the gate line; and a sidewall spacer pattern covering a sidewall of gate line, wherein the gate line includes a first gate pattern on the active region and a second gate pattern on the device isolation layer, and the sidewall spacer includes a first portion with a first width covering a sidewall of the first gate pattern and a second portion with a second width smaller than the first width covering a sidewall of the second gate pattern.