发明名称 |
Field effect transistor having capacitor between source and drain electrodes |
摘要 |
A semiconductor device having a field-effect transistor has a MOS capacitor formed on a principal surface of a semiconductor substrate of the semiconductor device, and connecting a first and a second electrodes of the MOS capacitor to a source electrode and a drain electrode, respectively, of the field-effect transistor.
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申请公布号 |
US5650645(A) |
申请公布日期 |
1997.07.22 |
申请号 |
US19960608945 |
申请日期 |
1996.02.29 |
申请人 |
NEC CORPORATION |
发明人 |
SONE, TSUTOMU;NISHII, TOSHINORI;HAGIMOTO, KEIZO;KOSEKI, YASUHIRO |
分类号 |
H01L29/808;H01L21/337;H01L21/8222;H01L27/06;H01L27/095;H03F3/183;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/808 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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