| 发明名称 |
PROCESS OF MANUFACTURING THE GATE OXIDE LAYER |
| 摘要 |
A process of manufacturing the gate oxide layer, which uses the wet oxidation by deuterium to form gate oxide layer, wherein the nitriding treatment is applied to formed gate oxide layer by high temperature annealing process, the stable Si-D bonds is formed on surface of the gate oxide layer to reduce silicon dangling bonds, which reduce the defect of the gate oxide interface and lower the interface defect density of the gate oxide layer and the charge density effectively to avoid NBTI, is provided. |
| 申请公布号 |
US2015064930(A1) |
申请公布日期 |
2015.03.05 |
| 申请号 |
US201314082310 |
申请日期 |
2013.11.18 |
| 申请人 |
Shanghai Huali Microelectronics Corporation |
发明人 |
LI ZHONGPING;WANG ZHI;SU JINMING;CHANG HSUSHENG |
| 分类号 |
H01L21/02;H01L21/28 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A process which forms a gate oxide film, which adopts a furnace tube to form the gate oxide layer, comprising:
a process of dry oxidation and a process of wet oxidation are applied to a semiconductor substrate in sequence to form a gate oxide layer, wherein the gate oxide layer is annealed by nitrogen in a high temperature; wherein oxygen gas is applied to the dry oxidation, and deuterium is applied to the wet oxidation. |
| 地址 |
Shanghai CN |
