| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a first insulating layer, a contact plug formed in the first insulating layer, a first etch stop layer over the first insulating layer, a second etch stop layer over the first etch stop layer, a second insulating layer over the second etch stop layer and having a contact opening over the contact plug, and a conductive layer disposed in the contact opening and over the contact plug. The contact opening is substantially free of the second etch stop layer, and the first etch stop layer is present in the contact opening. | ||
| 申请公布号 | US8969937(B2) | 申请公布日期 | 2015.03.03 |
| 申请号 | US201414291069 | 申请日期 | 2014.05.30 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Pai Chih-Yang;Tu Kuo-Chi;Chiang Wen-Chuan;Chou Chung-Yen |
| 分类号 | H01L27/108;H01L49/02;H01L23/522;H01L23/532;H01L21/768 | 主分类号 | H01L27/108 |
| 代理机构 | Lowe Hauptman & Ham, LLP | 代理人 | Lowe Hauptman & Ham, LLP |
| 主权项 | 1. A semiconductor device, comprising: a first insulating layer; a contact plug formed in the first insulating layer; a first etch stop layer over the first insulating layer; a second etch stop layer over the first etch stop layer; a second insulating layer over the second etch stop layer and having a contact opening over the contact plug; and a conductive layer disposed in the contact opening and over the contact plug; wherein the contact opening is substantially free of the second etch stop layer; and wherein the first etch stop layer is present in the contact opening. | ||
| 地址 | TW | ||