| 发明名称 | Method and apparatus for plasma processing | ||
| 摘要 | The present invention provides a plasma processing method that uses a plasma processing apparatus including a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, wherein the plasma processing method includes the steps of modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses. | ||
| 申请公布号 | US8969211(B2) | 申请公布日期 | 2015.03.03 |
| 申请号 | US201313960831 | 申请日期 | 2013.08.07 |
| 申请人 | Hitachi High-Technologies Corporation | 发明人 | Muto Satoru;Ono Tetsuo;Ohgoshi Yasuo;Eitoku Hirofumi |
| 分类号 | H01L21/302;H01L21/461;H01L21/3065 | 主分类号 | H01L21/302 |
| 代理机构 | Antonelli, Terry, Stout & Kraus, LLP. | 代理人 | Antonelli, Terry, Stout & Kraus, LLP. |
| 主权项 | 1. A plasma processing method that uses a plasma processing apparatus comprising a plasma processing chamber in which a sample is plasma processed, a first radio-frequency power supply that supplies a first radio-frequency power for generating plasma, and a second radio-frequency power supply that supplies a second radio-frequency power to a sample stage on which the sample is mounted, said plasma processing method comprising the steps of: modulating the first radio-frequency power by a first pulse; and controlling a plasma dissociation state to create a desired dissociation state by gradually controlling a duty ratio of the first pulse as a plasma processing time elapses. | ||
| 地址 | Tokyo JP | ||