Contact structure of semiconductor device priority claim

摘要

The invention relates to a contact structure of a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface and a trench below the major surface; a strained material filling the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an inter-layer dielectric (ILD) layer having an opening over the strained material, wherein the opening comprises dielectric sidewalls and a strained material bottom; a semiconductor layer on the sidewalls and bottom of the opening; a dielectric layer on the semiconductor layer; and a metal layer filling an opening of the dielectric layer.

主权项

1. A method of fabricating a semiconductor device, comprising:
providing a substrate comprising a major surface and a trench extending below the major surface; epitaxially growing a strained material in the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; forming an inter-layer dielectric (ILD) layer over the strained material; forming an opening in the ILD layer to expose a portion of the strained material; forming a semiconductor oxide layer on interior of the opening and extending over the ILD layer; forming a first metal layer over the semiconductor oxide layer; heating the substrate to form a semiconductor layer and a dielectric layer over the semiconductor layer; and forming a second metal layer in an opening of the dielectric layer.