发明名称 |
Solar cell and method for manufacturing the same |
摘要 |
A method for manufacturing a solar cell includes texturing a front surface of a semiconductor substrate having a first conductive type dopant by using a dry etching method, forming an emitter layer by ion-implanting a second conductive type dopant into the front surface of the semiconductor substrate, forming a back passivation film on a back surface of the semiconductor substrate; and forming a first electrode electrically connected to the emitter layer and a second electrode being in partial contact with the back surface of the semiconductor substrate. |
申请公布号 |
US8969125(B2) |
申请公布日期 |
2015.03.03 |
申请号 |
US201213469815 |
申请日期 |
2012.05.11 |
申请人 |
LG Electronics Inc. |
发明人 |
Lee Kyoungsoo;Shin Myungjun;Jeong Jiweon |
分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
代理机构 |
McKenna Long & Aldridge LLP |
代理人 |
McKenna Long & Aldridge LLP |
主权项 |
1. A method for manufacturing a solar cell, comprising:
texturing a front surface of a semiconductor substrate having a first conductive type dopant by using a dry etching method; forming an emitter layer by ion-implanting a second conductive type dopant into the front surface of the semiconductor substrate; forming a back passivation film on a back surface of the semiconductor substrate; forming a first electrode electrically connected to the emitter layer; and forming a second electrode being in partial contact with the back surface of the semiconductor substrate, wherein forming the second electrode comprises:
forming a second electrode film on the back passivation film;electrically connecting the second electrode film to the semiconductor substrate to be in partial contact with the back surface the semiconductor substrate;firing the second electrode film,wherein, during the firing, materials constituting the back passivation film and the second electrode are diffused into the semiconductor substrate to form a back surface field layer at an entire portion of the back surface of the semiconductor substrate. |
地址 |
Seoul KR |