SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a semiconductor substrate including a semiconductor layer, a power device formed in the semiconductor substrate, a plurality of concentric guard rings formed in the semiconductor substrate and surrounding the power device, and voltage applying means for applying successively higher voltages respectively to the plurality of concentric guard rings, with the outermost concentric guard ring having the highest voltage applied thereto.

主权项

1. A semiconductor device comprising:
a semiconductor layer; a power device including a first gate electrode, a second gate electrode, an emitter electrode, and a collector electrode, said first and second gate electrodes and said emitter electrode being formed on a top surface of said semiconductor layer, said collector electrode being formed on a bottom surface of said semiconductor layer; a gate wire for supplying a gate drive signal to said first gate electrode; and supply means for supplying said gate drive signal to said second gate electrode when said gate drive signal is at a high level and a voltage on said semiconductor layer is at a low level.