BOTTOM-UP PLATING OF THROUGH-SUBSTRATE VIAS

摘要

According to one embodiment of the present invention, a method of plating a TSV hole in a substrate is provided. The TSV hole may include an open end terminating at a conductive pad, a stack of wiring levels, and a plurality of chip interconnects. The method of plating a TSV may include attaching a handler to the plurality of chip interconnects, the handler having a conductive layer in electrical contact with the plurality of chip interconnects; exposing a closed end of the TSV hole, including the conductive pad, to an electrolyte solution; and applying an electrical potential along an electrical path from the conductive layer to the conductive pad causing conductive material from the electrolyte solution to deposit on the conductive pad and within the TSV hole, the electrical path including the conductive layer, the plurality of chip interconnects, the stack of wiring levels and the conductive pad.

主权项

1. A method of plating a through-substrate via (TSV) hole in a substrate, the TSV hole comprising an open end terminating at a conductive pad, a stack of wiring levels superimposed to one another positioned on top of the conductive pad, and a plurality of chip interconnects configured on a top surface of an upper wiring level, the method comprising:
attaching a conductive handler to the plurality of chip interconnects; exposing a closed end of the TSV hole, including the conductive pad, to an electrolyte solution; and applying an electrical potential along an electrical path from the conductive handler to the conductive pad causing conductive material from the electrolyte solution to deposit on the conductive pad and within the TSV hole, the electrical path including the conductive handler, the plurality of chip interconnects, the stack of wiring levels and the conductive pad.