发明名称 Architecture for 3-D NAND memory
摘要 Apparatuses are described that include stacked arrays of memory cell strings and their methods of operation. Apparatuses include architectures that reduce the use of several common components, allowing greater device density and smaller device size for a given semiconductor area.
申请公布号 US8964474(B2) 申请公布日期 2015.02.24
申请号 US201213524872 申请日期 2012.06.15
申请人 Micron Technology, Inc. 发明人 Morooka Midori;Tanaka Tomoharu
分类号 G11C16/00 主分类号 G11C16/00
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. An apparatus, comprising: a plurality of stacked arrays, including: memory strings of a first array of memory cell strings coupled between a first source and a first data line;memory strings of a second array of memory cell strings coupled between a second source and a second data line; a shared data detector coupled to both the first data line and the second data line; and a first switch coupled between the first data line and the shared data detector and a second switch coupled between the second data line and the shared data detector, and a third switch coupled between the first data line and an inhibit voltage source and a fourth switch coupled between the second data line and the inhibit voltage source.
地址 Boise ID US