发明名称 Wrap around phase change memory
摘要 A device is disclosed. The device includes a top electrode, a bottom electrode and a storage element between the top and bottom electrodes. The storage element includes a heat generating element disposed on the bottom electrode, a phase change element wrapping around an upper portion of the heat generating element, and a dielectric liner sandwiched between the phase change element and the heat generating element.
申请公布号 US8963116(B2) 申请公布日期 2015.02.24
申请号 US201213664412 申请日期 2012.10.30
申请人 GLOBALFOUNDRIES Singapore Pte. Ltd. 发明人 Lim Khee Yong;Zhang Zufa
分类号 H01L47/00;H01L21/20;G11C11/00 主分类号 H01L47/00
代理机构 Horizon IP Pte. Ltd. 代理人 Horizon IP Pte. Ltd.
主权项 1. A device comprising: a top electrode; a bottom electrode; and a storage element between the top and bottom electrodes, wherein the storage element comprises a heat generating element disposed on the bottom electrode,a phase change stack which comprises at least a phase change layer and a dielectric liner sandwiched between the phase change layer and the heat generating element, wherein the phase change layer and the dielectric liner of the phase change stack each wrap around an upper portion of the heat generating element, wherein, the dielectric liner covers the uppermost surface of the heat generating element.
地址 Singapore SG
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