| 摘要 |
<p>Method to produce diamonds containing Nitrogen-Vacancy centres from diamonds grown by a high pressure and high temperature process and containing isolated substitutional nitrogen, comprising:
- Irradiating (12) said diamonds by an electron beam such that the irradiation dose is comprised between 10 17 and 10 19 electrons per square centimeter;
- annealing (14) the irradiated diamonds in vacuum or in a inert atmosphere at a temperature above 700°C and for at least 1 hour;
characterized in that said electron beam has an acceleration energy above 7 MeV.</p> |
