发明名称 AMPLIFIER CIRCUIT
摘要 An amplifier circuit is configured in such a manner that the withstand voltage between the terminals of a FET 2 (withstand voltage B) is higher than the withstand voltage between the terminals of a FET 1 (withstand voltage A), and that the gate width of the FET 1 (Wg1) is narrower than the gate width of the FET 2 (Wg2). This makes it possible to increase the gain while maintaining high output power. The narrow gate width of the FET 1 (Wg1) connected to an input terminal 3 enables reducing the size of the cascode amplifier.
申请公布号 US2015048887(A1) 申请公布日期 2015.02.19
申请号 US201314387726 申请日期 2013.03.12
申请人 Nitta Naoko;Kato Katsuya;Mukai Kenji;Horiguchi Kenichi;Hieda Morishige;Mori Kazutomi;Yamamoto Kazuya 发明人 Nitta Naoko;Kato Katsuya;Mukai Kenji;Horiguchi Kenichi;Hieda Morishige;Mori Kazutomi;Yamamoto Kazuya
分类号 H03F1/02;H03F3/193;H03F3/21 主分类号 H03F1/02
代理机构 代理人
主权项
地址 Tokyo JP