| 摘要 |
PROBLEM TO BE SOLVED: To improve detection accuracy of a load state.SOLUTION: A semiconductor device includes an n-type semiconductor region 32, a rear-surface electrode 33, p-type base regions 34 and 35, ndiffusion layers 36 and 37, a gate insulating film 40, a gate electrode 41, and a voltage detection circuit 24. The ndiffusion layer 36 functions as a source of an output MOS transistor 21, and the ndiffusion layer 37 functions as a source of a sense MOS transistor 22. The gate electrode 41 is provided so as to face the n-type semiconductor region 32 and the p-type base regions 34 and 35 across the gate insulating film 40. A load current Iis passed between the rear-surface electrode 33 and the ndiffusion layer 36. The voltage detection circuit 24 generates a detection signal Sin response to a voltage between a node n1 connected to the ndiffusion layer 36 and a node n2 connected to a potential extraction electrode 43 having a potential corresponding to a potential of the rear-surface electrode 33. |
