THREE-DIMENSIONAL SEMICONDUCTOR DEVICE, VARIABLE RESISTIVE MEMORY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME

摘要

A three-dimensional semiconductor device, a resistive variable memory device including the same, and a method of manufacturing the same are provided. The 3D semiconductor device includes a source formed of a first semiconductor material, a channel layer formed on the source and formed of the first semiconductor material, a lightly doped drain (LDD) region formed on the channel layer and formed of a second semiconductor material having a higher oxidation rate than that of the first semiconductor material, a drain formed on the LDD region and formed of the first semiconductor material, and a gate insulating layer formed on outer circumferences of the channel layer, the LDD region, and the drain.

主权项

1. A three-dimensional (3D) semiconductor device, comprising:
a source formed of a first semiconductor material; a channel layer formed on the source and formed of the first semiconductor material; a lightly doped drain (LDD) region formed on the channel layer and formed of a second semiconductor material having a higher oxidation rate than that of the first semiconductor material; a drain formed on the LDD region and formed of the first semiconductor material; and a gate insulating layer formed on outer circumferences of the channel layer, the LDD region, and the drain.