发明名称 |
STACKED VIA STRUCTURES AND METHODS OF FABRICATION |
摘要 |
This disclosure provides systems, methods and apparatus for a stacked via having a top via structure and a bottom via structure. In one aspect, the bottom via structure includes a bottom dielectric layer and a bottom via extending through the bottom dielectric layer. The bottom via includes a bottom metal formed on the bottom dielectric layer, where the bottom via is substantially filled by a dielectric material. The top via structure includes a top dielectric layer over the bottom metal and a top via extending to a top plane of the bottom via in the top dielectric layer. The top via includes a top metal formed on the top dielectric layer, where the top metal is in electrical contact with the bottom metal at a peripheral area of the bottom via structure. |
申请公布号 |
WO2015023510(A1) |
申请公布日期 |
2015.02.19 |
申请号 |
WO2014US50187 |
申请日期 |
2014.08.07 |
申请人 |
QUALCOMM MEMS TECHNOLOGIES, INC. |
发明人 |
TANG, HAIRONG;PAN, YAOLING;SYAU, TSENGYOU |
分类号 |
B81C1/00;H01L23/48 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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