发明名称 STACKED VIA STRUCTURES AND METHODS OF FABRICATION
摘要 This disclosure provides systems, methods and apparatus for a stacked via having a top via structure and a bottom via structure. In one aspect, the bottom via structure includes a bottom dielectric layer and a bottom via extending through the bottom dielectric layer. The bottom via includes a bottom metal formed on the bottom dielectric layer, where the bottom via is substantially filled by a dielectric material. The top via structure includes a top dielectric layer over the bottom metal and a top via extending to a top plane of the bottom via in the top dielectric layer. The top via includes a top metal formed on the top dielectric layer, where the top metal is in electrical contact with the bottom metal at a peripheral area of the bottom via structure.
申请公布号 WO2015023510(A1) 申请公布日期 2015.02.19
申请号 WO2014US50187 申请日期 2014.08.07
申请人 QUALCOMM MEMS TECHNOLOGIES, INC. 发明人 TANG, HAIRONG;PAN, YAOLING;SYAU, TSENGYOU
分类号 B81C1/00;H01L23/48 主分类号 B81C1/00
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