PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

摘要

A plasma processing method of etching a multilayered material having a structure where a first magnetic layer 105 and a second magnetic layer 103 are stacked with an insulating layer 104 therebetween is performed by a plasma processing apparatus 10 including a processing chamber 12 where a processing space S is formed; and a gas supply unit 44 of supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl2, and the second processing gas contains H2.

主权项

1. A plasma processing method of etching a multilayered material having a structure in which a first magnetic layer and a second magnetic layer are stacked with an insulating layer interposed therebetween, by using a plasma processing apparatus including a processing chamber in which a processing space for plasma generation is partitioned and formed; and a gas supply unit of supplying a processing gas into the processing space, the plasma processing method comprising:
a first etching process in which the first magnetic layer is etched by supplying a first processing gas into the processing chamber and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process in which a residue produced in the first etching process is removed by supplying a second processing gas into the processing chamber and generating plasma, wherein the first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl2, and the second processing gas contains H2.