Structure of Dielectric Grid with a Metal Pillar for Semiconductor Device

摘要

An image sensor device and a method for manufacturing the image sensor device are provided. An image sensor device includes a substrate, sensor elements disposed at a front surface of the substrate, and a dielectric grid disposed over a back surface of the substrate. The dielectric grid includes a first dielectric layer as a bottom portion, a metal pillar, as a core portion of a upper portion, disposed over the first dielectric layer and a second dielectric layer wrapping around the metal pillar. The image sensor device also includes a stack of layers disposed over the back surface of the substrate. Refractive index of each layers increases from top layer to bottom layer. The image sensor device also includes a color filter and a microlens disposed over the back surface of the substrate.

主权项

1. An image sensor device comprising:
a substrate having a front surface and a back surface; a plurality of sensor elements disposed within the substrate, each of the plurality of sensor elements being operable to sense radiation projected towards the back surface of the substrate; a dielectric grid disposed over the back surface of the substrate, the dielectric grid including:
a first dielectric layer as a bottom portion;a metal pillar as a core portion of an upper portion, disposed over the first dielectric layer; anda second dielectric layer wrapping around the metal pillar; anda stack of layers disposed over the back surface of the substrate; and a color filter disposed on the dielectric grid such that a bottom of the color filter is below a top of the metal pillar.