Magnetic memory element, magnetic memory device, spin transistor, and integrated circuit

摘要

One embodiment provides a magnetic memory element, including: a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer.

主权项

1. A magnetic memory element, comprising:
a first ferromagnetic layer whose magnetization is variable; a second ferromagnetic layer which has a first band split into a valence band and a conduction band and a second band being continuous at least from the valence band to the conduction band; and a nonmagnetic layer provided between the first ferromagnetic layer and the second ferromagnetic layer, wherein reading is performed by causing electrons to flow between the first ferromagnetic layer and the second ferromagnetic layer, and wherein writing is performed by
applying a voltage corresponding to energy equal to or less than an energy difference from a Fermi level to the valence band of the second ferromagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer, to thereby perform spin-injection of electrons of the second band of the second ferromagnetic layer into the first ferromagnetic layer, orapplying a voltage corresponding to energy larger than the energy difference between the first ferromagnetic layer and the second ferromagnetic layer, to thereby perform spin-injection of electrons of the first band of the second ferromagnetic layer into the first ferromagnetic layer.