| 发明名称 | Stabilization of resistive memory | ||
| 摘要 | The present disclosure includes apparatuses and methods including stabilization of resistive memory. A number of embodiments include applying a programming signal to a resistive memory cell, wherein the programming signal includes a first portion having a first polarity and a second portion having a second polarity, wherein the second polarity is opposite the first polarity. | ||
| 申请公布号 | US8958233(B2) | 申请公布日期 | 2015.02.17 |
| 申请号 | US201113275901 | 申请日期 | 2011.10.18 |
| 申请人 | Micron Technology, Inc. | 发明人 | Chen Xiaonan |
| 分类号 | G11C11/00 | 主分类号 | G11C11/00 |
| 代理机构 | Brooks, Cameron & Huebsch, PLLC | 代理人 | Brooks, Cameron & Huebsch, PLLC |
| 主权项 | 1. A method of operating a resistive memory cell, comprising: applying a programming signal to the resistive memory cell; wherein the programming signal includes a first portion having a first polarity and a second portion having a second polarity, wherein the second polarity is opposite the first polarity. | ||
| 地址 | Boise ID US | ||