发明名称 |
PLASMA PROCESSING APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of processing in high accuracy.SOLUTION: The plasma processing apparatus includes: plasma forming means (102, 115, 116, etc.); a mounting table 111 on which a wafer 110 is mounted; a bias power supply 117 for supplying the mounting table 111 with high frequency power; and a detector 108 for detecting a positive and a negative current amount flowing between the bias power supply 117 and the mounting table 111 and a current amount ratio thereof. According to the ratio, conditions for forming the plasma and plasma processing of the wafer 110 are adjusted. |
申请公布号 |
JP2015032779(A) |
申请公布日期 |
2015.02.16 |
申请号 |
JP20130163184 |
申请日期 |
2013.08.06 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORP |
发明人 |
HIROTA KOSA;USUI TAKETO;INOUE TOMOMI;NAKAMOTO SHIGERU |
分类号 |
H01L21/3065;H05H1/00;H05H1/46 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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