发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of processing in high accuracy.SOLUTION: The plasma processing apparatus includes: plasma forming means (102, 115, 116, etc.); a mounting table 111 on which a wafer 110 is mounted; a bias power supply 117 for supplying the mounting table 111 with high frequency power; and a detector 108 for detecting a positive and a negative current amount flowing between the bias power supply 117 and the mounting table 111 and a current amount ratio thereof. According to the ratio, conditions for forming the plasma and plasma processing of the wafer 110 are adjusted.
申请公布号 JP2015032779(A) 申请公布日期 2015.02.16
申请号 JP20130163184 申请日期 2013.08.06
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 HIROTA KOSA;USUI TAKETO;INOUE TOMOMI;NAKAMOTO SHIGERU
分类号 H01L21/3065;H05H1/00;H05H1/46 主分类号 H01L21/3065
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