| 摘要 |
<p>The disclosed thin film transistor includes a channel layer which includes zinc, nitrogen, and oxygen, an etch stop layer which is formed on the channel layer and includes fluorine, source and drain electrodes which are in contact with both sides of the channel layer, respectively, a gate electrode which is formed to correspond to the channel layer, and a gate insulation layer which is formed between the channel layer and the gate electrode.</p> |
