Power Semiconductor Device and Method

摘要

A power semiconductor device includes a semiconductor body having a first side, a second side opposite the first side and an outer rim. The semiconductor body includes an active region, an edge termination region arranged between the active region and the outer rim, a first doping region in the active region and connected to a first electrode arranged on the first side, a second doping region in the active region and the edge termination region and connected to a second electrode arranged on the second side, a drift region between the first doping region and the second doping region, the drift region including a first portion adjacent to the first side and a second portion arranged between the first portion and the second doping region, and an insulating region arranged in the edge termination region between the second doping region and the first portion of the drift region.

主权项

1. A power semiconductor device, comprising:
a semiconductor body having a first side, a second side opposite the first side and an outer rim, the semiconductor body comprising an active region and an edge termination region arranged between the active region and the outer rim, the semiconductor body further comprising:
a first doping region in the active region and connected to a first electrode arranged on the first side of the semiconductor body;a second doping region in the active region and the edge termination region and connected to a second electrode arranged on the second side of the semiconductor body;a drift region between the first doping region and the second doping region, the drift region comprising a first portion adjacent to the first side of the semiconductor body and a second portion arranged between the first portion and the second doping region; andan insulating region arranged in the edge termination region between the second doping region and the first portion of the drift region.