发明名称 IMAGE SENSOR, FABRICATING METHOD THEREOF, AND DEVICE COMPRISING THE IMAGE SENSOR
摘要 Image sensor, fabricating method thereof, and device comprising the image sensor are provided, which comprises a substrate in which a photoelectric transformation device is formed, an interconnection structure formed on the substrate and including multiple intermetal dielectric layers and multiple metal interconnections placed in the multiple intermetal dielectric layers, the interconnection structure defining a cavity aligned corresponding to the photoelectric transformation device, a moisture absorption barrier layer conformally formed on a top of the interconnection structure and in the cavity; and a light guide unit formed on the moisture absorption barrier layer and including light transmittance material filling the cavity, wherein the moisture absorption barrier layer is formed with a uniform thickness on both sides and a bottom of the cavity and on a top surface of the multiple intermetal dielectric layer.
申请公布号 US2015041944(A1) 申请公布日期 2015.02.12
申请号 US201414479885 申请日期 2014.09.08
申请人 KIM Hong-ki;KANG Ho-Kyu;LEE June-taeg;CHOI Jae-Hee 发明人 KIM Hong-ki;KANG Ho-Kyu;LEE June-taeg;CHOI Jae-Hee
分类号 H01L27/146;H01L23/00 主分类号 H01L27/146
代理机构 代理人
主权项 1. An image sensor comprising: a substrate including a photoelectric transformation device adjacent to a first surface of the substrate; an interconnection structure on the first surface, the interconnection structure including one or more intermetal dielectric layers and one or more metal interconnections in the one or more intermetal dielectric layers; a backside interlayer dielectric layer on a second surface of the substrate which is on an opposite side of the substrate with respect to the first surface; a moisture absorption barrier layer on the backside interlayer dielectric layer; and a color filter on the moisture absorption barrier layer, the color filter being aligned corresponding to the photoelectric transformation device.
地址 Hwaseong-si KR