发明名称 METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A MELT
摘要 A method of horizontal ribbon growth from a melt of material includes forming a leading edge of the ribbon using radiative cooling, drawing the ribbon in a first direction along a surface of the melt, removing heat radiated from the melt in a region adjacent the leading edge of the ribbon by setting a temperature Tc of a cold plate proximate a surface of the melt at a value that is greater than 50° C. below a melting temperature Tm of the material, setting a temperature at a bottom of the melt at a value that is between 1° C. and 3° C. greater than the Tm, and providing the heat flow through the melt at a heat flow rate that is above that of an instability regime characterized by segregation of solutes during crystallization of the melt, and is below a heat flow rate for stable isotropic crystal growth.
申请公布号 US2015040818(A1) 申请公布日期 2015.02.12
申请号 US201414526008 申请日期 2014.10.28
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Kellerman Peter L.;Sun Dawei;Mackintosh Brian H.
分类号 C30B15/14;C30B29/06;C30B15/06 主分类号 C30B15/14
代理机构 代理人
主权项 1. A method of horizontal ribbon growth from a melt of material, comprising: forming a leading edge of the ribbon using radiative cooling on a surface of the melt; drawing the ribbon in a first direction along the surface of the melt; removing heat radiated from the melt in a region adjacent the leading edge of the ribbon by setting a temperature Tc of a cold plate proximate a surface of the melt at a value that is greater than 50° C. below a melting temperature Tm of the material; setting a temperature at a bottom of the melt at a value that is between 1° C. and 3° C. greater than the Tm; and providing the heat flow through the melt at a heat flow rate that is above that of an instability regime characterized by segregation of solutes during crystallization of the melt, and is below a heat flow rate for stable isotropic crystal growth.
地址 Gloucester MA US
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