| 摘要 |
The objective of the present invention is to provide a method for manufacturing an integrated circuit (IC) device. The method includes the step of providing a precursor including first and second metal oxide semiconductor (MOS) areas. The first and second MOS areas include first and second gate areas, semiconductor layer stacks, source/drain areas and separation areas. The method includes the steps of: exposing and oxidizing a first semiconductor layer stack to form a first external oxide layer and a first internal nanowire; and removing the first external oxide layer to expose the first internal nanowire of the first gate area. A first high-k/metal gate (HK/MG) stack surrounds the first internal nanowire. The method includes the steps of: exposing and oxidizing a second semiconductor layer stack to form a second external oxide layer and a second internal nanowire; and removing the second external oxide layer to expose the second internal nanowire of the second gate area. A second HK/MG stack surrounds the second internal nanowire. |
