| 发明名称 | Thin film transistor and display device having the same | ||
| 摘要 | A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm. | ||
| 申请公布号 | US8952368(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201313898186 | 申请日期 | 2013.05.20 |
| 申请人 | Samsung Display Co., Ltd. | 发明人 | Park Jong-Hyun;You Chun-Gi;Park Sun;Kang Jin-Hee;Lee Yul-Kyu |
| 分类号 | H01L51/52;H01L29/786;H01L27/12;H01L29/66;H01L27/32 | 主分类号 | H01L51/52 |
| 代理机构 | Lee & Morse, P.C. | 代理人 | Lee & Morse, P.C. |
| 主权项 | 1. A thin film transistor, comprising: a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein: the polysilicon of the semiconductor layer includes a grain boundary that is parallel to both a crystallization growing direction and a current flow direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm. | ||
| 地址 | Yongin, Gyeonggi-Do KR | ||