发明名称 Display substrate and method of manufacturing the same
摘要 A display substrate includes a base substrate, a first insulating layer formed on a base substrate, a pixel including a pixel electrode having the first insulating layer, and a circuit including a circuit transistor disposed on a peripheral area to drive the pixel. The pixel includes a first channel formed on the base substrate having the first insulating layer formed thereon. The first channel includes a poly-silicon layer, a first source electrode and a first drain electrode formed on the first channel that are spaced apart from each other, and a first gate electrode formed on the first source electrode and the first drain electrode corresponding to the first channel which is formed of the transparent conductive material. The poly-silicon layer is formed at a front channel portion of the first channel proximal to the first gate electrode through the first gate electrode.
申请公布号 US8952876(B2) 申请公布日期 2015.02.10
申请号 US201012900846 申请日期 2010.10.08
申请人 Samsung Display Co., Ltd. 发明人 Kim Hyung-Jun;Cho Sung-Haeng;Choi Yong-Mo
分类号 G09G3/36;G11C19/28;G02F1/1362;G11C19/18 主分类号 G09G3/36
代理机构 F. Chau & Associates, LLC 代理人 F. Chau & Associates, LLC
主权项 1. A display substrate comprising: a base substrate including a display area and a peripheral area surrounding the display area; a bottom-gate electrode formed on the base substrate in the peripheral area a first insulating layer formed on the base substrate and on the bottom-gate electrode; a pixel disposed in the display area, and including a pixel electrode having a transparent conductive material and fad led on the base substrate on which the first insulating layer is formed; and a circuit including a circuit transistor disposed in the peripheral area to drive the pixel and including a first channel and first source, drain and gate electrodes, the first channel being formed on the base substrate on which the first insulating layer is formed and having a poly-silicon layer, the first source and drain electrodes being formed on the first channel and being spaced apart from each other, the first gate electrode being a top-gate electrode formed over the first source and drain electrodes corresponding to the first channel and having the transparent conductive material, wherein the first source electrode has a convex and concave structure which has a repeated U-shape and the first drain electrode has a convex and concave structure which has a repeated U-shape corresponding to the first source electrode, and wherein the top-gate electrode is electrically connected to the bottom-gate electrode through a contact hole in the first insulating layer.
地址 Yongin, Gyeonggi-do KR