发明名称 |
Display substrate and method of manufacturing the same |
摘要 |
A display substrate includes a base substrate, a first insulating layer formed on a base substrate, a pixel including a pixel electrode having the first insulating layer, and a circuit including a circuit transistor disposed on a peripheral area to drive the pixel. The pixel includes a first channel formed on the base substrate having the first insulating layer formed thereon. The first channel includes a poly-silicon layer, a first source electrode and a first drain electrode formed on the first channel that are spaced apart from each other, and a first gate electrode formed on the first source electrode and the first drain electrode corresponding to the first channel which is formed of the transparent conductive material. The poly-silicon layer is formed at a front channel portion of the first channel proximal to the first gate electrode through the first gate electrode. |
申请公布号 |
US8952876(B2) |
申请公布日期 |
2015.02.10 |
申请号 |
US201012900846 |
申请日期 |
2010.10.08 |
申请人 |
Samsung Display Co., Ltd. |
发明人 |
Kim Hyung-Jun;Cho Sung-Haeng;Choi Yong-Mo |
分类号 |
G09G3/36;G11C19/28;G02F1/1362;G11C19/18 |
主分类号 |
G09G3/36 |
代理机构 |
F. Chau & Associates, LLC |
代理人 |
F. Chau & Associates, LLC |
主权项 |
1. A display substrate comprising:
a base substrate including a display area and a peripheral area surrounding the display area; a bottom-gate electrode formed on the base substrate in the peripheral area a first insulating layer formed on the base substrate and on the bottom-gate electrode; a pixel disposed in the display area, and including a pixel electrode having a transparent conductive material and fad led on the base substrate on which the first insulating layer is formed; and a circuit including a circuit transistor disposed in the peripheral area to drive the pixel and including a first channel and first source, drain and gate electrodes, the first channel being formed on the base substrate on which the first insulating layer is formed and having a poly-silicon layer, the first source and drain electrodes being formed on the first channel and being spaced apart from each other, the first gate electrode being a top-gate electrode formed over the first source and drain electrodes corresponding to the first channel and having the transparent conductive material, wherein the first source electrode has a convex and concave structure which has a repeated U-shape and the first drain electrode has a convex and concave structure which has a repeated U-shape corresponding to the first source electrode, and wherein the top-gate electrode is electrically connected to the bottom-gate electrode through a contact hole in the first insulating layer. |
地址 |
Yongin, Gyeonggi-do KR |