发明名称 Optically pumped semiconductor and device using the same
摘要 The optically pumped semiconductor according to the present invention is an optically pumped semiconductor that is a semiconductor of a perovskite oxide. The optically pumped semiconductor has a composition represented by a general formula: BaZr1-xMxO3-α, where M denotes at least one element selected from trivalent elements, x denotes a numerical value more than 0 but less than 0.8, and α denotes an amount of oxygen deficiency that is a numerical value more than 0 but less than 1.5. The optically pumped semiconductor has a crystal system of a cubic, tetragonal, or orthorhombic crystal. When lattice constants of the crystal system are referred to as a, b, and c, provided that a≦b≦c, conditions that 0.41727 nm≦a, b, c≦0.42716 nm and a/c≧0.98 are satisfied.
申请公布号 US8951447(B2) 申请公布日期 2015.02.10
申请号 US201013119117 申请日期 2010.04.26
申请人 Panasonic Intellectual Property Management Co., Ltd. 发明人 Taniguchi Noboru;Tokuhiro Kenichi;Suzuki Takahiro;Kuroha Tomohiro;Nomura Takaiki;Hatoh Kazuhito
分类号 H01B1/02;B01J35/00;B01J23/00;B01J23/08;B01J23/10;B01J23/62;C01B3/04;C01B13/02;C01G25/00;C25B1/00 主分类号 H01B1/02
代理机构 Hamre, Schumann, Mueller & Larson, P.C. 代理人 Hamre, Schumann, Mueller & Larson, P.C.
主权项 1. A solar cell comprising an optically pumped semiconductor that is configured to generate electricity when being irradiated with light, wherein the optically pumped semiconductor is a semiconductor of a perovskite oxide, wherein the optically pumped semiconductor has a composition represented by a general formula: BaZr1-xMxO3-α, where M denotes at least one element selected from trivalent elements, x denotes a numerical value more than 0 but less than 0.8, and a denotes an amount of oxygen deficiency that is a numerical value more than 0 but less than 1.5, and has a crystal system of a cubic, tetragonal, or orthorhombic crystal, and when lattice constants of the crystal system are referred to as a, b, and c, provided that a≦b≦c, conditions that 0.41727 nm≦a, b, c≦0.42716 nm and a/c≧0.98 are satisfied.
地址 Osaka JP