Thin film transistor, and method of manufacturing the same

摘要

A thin film transistor and a method of manufacturing the same are provided. The thin film transistor includes a first gate electrode and an active layer including a crystalline oxide semiconductor which is insulated from the first gate electrode by a first insulating layer and the active layer is arranged to overlap the first gate electrode. A source electrode is formed including at least a portion overlaps the active layer, and a drain electrode is arranged being spaced apart from the source electrode and at least a portion of the drain electrode overlaps the active layer, wherein the source electrode and the drain electrode are insulated from the first gate electrode by the first insulating layer.

主权项

1. A thin film transistor, comprising:
a first gate electrode; an active layer comprising a crystalline oxide semiconductor layer being insulated from the first gate electrode by a first insulating layer, the active layer being arranged to overlap the first gate electrode; a source electrode and a drain electrode spaced apart from the source electrode; a second insulating layer; and a second gate electrode, the second gate electrode and the first gate electrode being arranged on opposite sides of the active layer, wherein the second gate electrode is insulated from the active layer by the second insulating layer, wherein the active layer comprises a triple layer comprising a first crystalline oxide semiconductor layer, an amorphous oxide semiconductor layer, and a second crystalline oxide semiconductor layer, and wherein the first crystalline oxide semiconductor layer is arranged adjacent to the first insulating layer, and the second crystalline oxide semiconductor layer is arranged adjacent to the second insulating layer.