Three dimensional semiconductor memory devices and methods of fabricating the same

摘要

A 3D semiconductor device includes an electrode structure has electrodes stacked on a substrate, semiconductor patterns penetrating the electrode structure, charge storing patterns interposed between the semiconductor patterns and the electrode structure, and blocking insulating patterns interposed between the charge storing patterns and the electrode structure. Each of the blocking insulating patterns surrounds the semiconductor patterns, and the charge storing patterns are horizontally spaced from each other and configured in such a way as to each be disposed around a respective one of the semiconductor patterns. Also, each of the charge storing patterns includes a plurality of horizontal segments, each interposed between vertically adjacent ones of the electrodes.

主权项

1. A three-dimensional semiconductor device, comprising:
an electrode structure including electrodes and insulating patterns alternately and vertically stacked on a substrate, the electrode structure including a first recess region and a second recess region which are vertically separated from each other and provided between the electrodes; a semiconductor pattern penetrating the electrode structure; and a data storage layer disposed between the electrode structure and the semiconductor pattern, the data storage layer including a first extended portion and a second extended portion horizontally extending into the first recess region and the second recess region, respectively, wherein the first recess region has a first vertical thickness and the second recess region has a second vertical thickness greater than the first vertical thickness, wherein a portion of the semiconductor pattern horizontally extends into the second recess region.