| 摘要 |
In a memory cell and a method thereof, a first electrode is formed in the opening of a first dielectric layer. The first dielectric layer is formed on a substrate including a metal layer. The opening can be in physical contact between the first electrode and the metal layer. The present invention includes a first electrode which a first width (W1) and is extended to a region defined by the opening or over; a resistance layer which is formed on the first electrode and practically has the first width (W1); a capping layer which has a second width (W2) which is narrower than the first width, and is formed on the resistance layer; a second electrode which is formed on the capping layer and practically has the second width (W2); a first composite space region which has at least two different dielectric layers formed on the resistance layer between the first width (W1) and the second width (W2); and a via connected to the second electrode. |
