发明名称 LIGHT EMITTING DIODE STRUCTURE
摘要 A light emitting diode structure is provided. The light emitting diode structure comprises a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.
申请公布号 US2015034982(A1) 申请公布日期 2015.02.05
申请号 US201414228319 申请日期 2014.03.28
申请人 Lextar Electronics Corporation 发明人 Chen Bo-Yu;Tsou Po-Hung;Chou Tzu-Hung
分类号 H01L33/14 主分类号 H01L33/14
代理机构 代理人
主权项 1. A light emitting diode structure, comprising: a substrate; a light emitting multi-layer structure formed on the substrate by way of stacking; a first current blocking layer formed on part of the light emitting multi-layer structure; a first current spreading layer covering the first current blocking layer and the light emitting multi-layer structure; and a second current blocking layer formed on part of the first current spreading layer, wherein an orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer; and a second current spreading layer covering the second current blocking layer and the first current spreading layer.
地址 Hsinchu TW