| 摘要 |
PROBLEM TO BE SOLVED: To suppress dark current resulting from operation of a transistor provided adjacent to a photoelectric conversion element.SOLUTION: A photoelectric conversion device comprises: a photoelectric conversion element including a first semiconductor region 11 of a first conductivity type; a second semiconductor region 130 of the first conductivity type provided in contact with the first semiconductor region; a third semiconductor region 131 of the first conductivity type provided in a position apart from the second semiconductor region; a fourth semiconductor region 1 of a second conductivity type provided between the second semiconductor region and the third semiconductor region; a fifth semiconductor region 150 of the first conductivity type provided in a position apart from the third semiconductor region; a sixth semiconductor region of the second conductivity type provided between the third semiconductor region and the fifth semiconductor region; a first gate electrode provided on the fourth semiconductor region via an insulating film; and a second gate electrode provided on the sixth semiconductor region via the insulating film. The impurity concentration of the third semiconductor region is lower than the impurity concentration of the fifth semiconductor region. |
