发明名称 |
METHOD FOR REDUCING LATERAL EXTRUSION FORMED IN SEMICONDUCTOR STRUCTURES AND SEMICONDUCTOR STRUCTURES FORMED THEREOF |
摘要 |
Aspects of the present invention relate to method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof. Various embodiments include a method for reducing lateral extrusion formed in semiconductor structures. The method can include removing a portion of a first lateral extrusion in an aluminum layer of the semiconductor structure, and determining a post-removal thickness of a dielectric layer positioned adjacent the aluminum layer. The post-removal thickness may be determined subsequent to the removing of the portion of the first lateral extrusion. The method can also include determining a difference between the post-removal thickness of the dielectric layer and a pre-removal thickness of the dielectric layer. |
申请公布号 |
US2015035117(A1) |
申请公布日期 |
2015.02.05 |
申请号 |
US201313955531 |
申请日期 |
2013.07.31 |
申请人 |
International Business Machines Corporation |
发明人 |
Adderly Shawn A.;Czabaj Brian M.;Delibac Daniel A.;Gambino Jeffrey P.;Moon Matthew D.;Thomas David C. |
分类号 |
H01L49/02;H01L21/66 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
removing a portion of a first lateral extrusion in an aluminum layer of a semiconductor structure; determining a post-removal thickness of a dielectric layer positioned adjacent the aluminum layer subsequent to the removing of the portion of the first lateral extrusion; and determining a difference between the post-removal thickness of the dielectric layer and a pre-removal thickness of the dielectric layer. |
地址 |
Armonk NY US |